The analysis and testing center was built in October 2012. It mainly provides technical support for the production and research and development of the photovoltaic industry, such as analysis and testing, analysis method development and so on. Meanwhile, it is responsible for the testing of the samples. The laboratory of analysis and detection center is in accordance with
CNAS national accreditation laboratory construction, based on the ISO/IEC17025:2005 management, and approved by the CNAS laboratory on 08 06 2015, approved the certificate, and on 06 month of 2016 through the supervision of the review. Declare CNAS
The certified projects include "industrial silicon chemical composition analysis (GB/T 14849.4-2008)", "acid leaching - Inductively coupled plasma mass spectrometry" for the determination of metallic impurities on the surface of polysilicon (GB/T 24582-2009), "carrier life of polysilicon in vivo
Test (GB/T 26068-2010) "and" non intrinsic semiconductor conducting model test (GB/T 1550-1997) ".
The analysis and testing center has more than 10 inspectors, relying on the talent training platform of the Key Laboratory of solar photovoltaic system in Liaoning province of Dalian University of Technology. 80% of them have master degree or above, or more than intermediate titles.
The testing experience and method development ability of the year has a high level in the detection and analysis of silicon materials, and has solved many technical problems in the industry many times. At present, the center has inductively coupled plasma mass spectrometer (ICP-MS) and inductively coupled plasma emission (ICP).
ICP-AES, infrared imaging detection instrument, less child life test instrument, resistivity meter, electrical conductivity test instrument, and other first-class large-scale inorganic analysis and testing instruments, fixed assets of nearly 10 million yuan, can be metallurgical, photovoltaic, half.
Conducting qualitative and quantitative analysis of conductors can analyze the performance and composition of the products in this field.
The analysis and detection center actively participates in the measurement audit and ability verification project organized by the China National Gold international laboratory capability verification research Co., Ltd. for many years. At the same time, the interlaboratory comparison with several laboratories in the industry is carried out each year.
Instrument comparison. The amount of Trace Boron in silicon crystal has reached the detection level of GDMS detected by Evans analysis group. The existing inspection projects at the center are as follows:
L qualitative and quantitative analysis: analysis of ICP-AES constant, trace, and trace elements for metallurgical and photovoltaic materials. Analysis of ICP-MS, trace, trace and ultra trace elements of metallurgical, photovoltaic and semiconductor materials
L physical property test: Defect Analysis of infrared flaw detection, carrier lifetime test in vivo, conduction type, etc.
L unknown sample analysis: composition analysis of unknown samples in photovoltaic, metallurgy and semiconductor industries
L ICP-AES detected the range of elements: Al, B, Ba, Bi, Cd, Co, Cr, Cu, Fe, Fe, Cr, P, P, P, P, P, P, C, P, C, C, P, C, C, C, C, P, etc.
L ICP-MS detected the range of elements: Al, B, Ba, Bi, Cd, Co, Cr, Cu, Fe, Fe, Cr, P, C, P, C, C, P, C, C, C, C, P, etc.